Ikoreshwa rya Mosfet, IGBT na vacuum triode mumashini yo gushyushya inganda (itanura)
Ibigezweho Imbaraga zo gushyushya tekinoroji yo gutanga ahanini ishingiye kubwoko butatu bwibikoresho byingufu: MOSFET, IGBT na vacuum triode, buri kimwekimwe kigira uruhare rudasimburwa muburyo bwihariye bwo gukoresha. MOSFET ibaye ihitamo ryambere mubijyanye no gushyushya neza bitewe nuburyo bwiza cyane bwo hejuru (100kHz-1MHz), kandi irakwiriye cyane cyane kubintu bito bito kandi bisobanutse neza nko gushonga imitako no gusudira ibikoresho bya elegitoroniki. Muri byo, SiC / GaN MOSFET yongereye imikorere kugera kuri 90%, ariko imbaraga zayo (ubusanzwe
Mu rwego rwo hagati-rwinshi-nimbaraga nyinshi (1kHz-100kHz), IGBT yerekanye inyungu zikomeye zo guhatanira. Nibikoresho byibanze byo gutanura inganda nicyuma Kuvura Ubushuhe imirongo yumusaruro, IGBT module irashobora kugera byoroshye MW-urwego rwamashanyarazi. Ikoranabuhanga ryayo rikuze hamwe nigiciro cyiza-cyiza bituma ihitamo bisanzwe mubikoresho byo gutunganya nkibyuma na aluminiyumu. Hamwe nogutangiza tekinoroji ya SiC, inshuro zikoreshwa mugisekuru gishya cya IGBT zirenga 50kHz, bikomeza gushimangira isoko ryayo mugice giciriritse.
Muri ultra-high-frequency and power-scenarios (1MHz-30MHz), triode trium iracyafite umwanya utajegajega. Yaba ibyuma bidasanzwe byo gushonga, kubyara plasma, cyangwa ibikoresho byohereza amakuru, trium vacuum irashobora gutanga ingufu za MW-urwego ruhamye. Umwihariko wacyo wokoresha imbaraga zidasanzwe hamwe nububiko bworoshye bwububiko bituma uhitamo neza gutunganya ibyuma bikora nka titanium na zirconium, nubwo bikora neza (50% -70%) hamwe nigiciro kinini cyo kubungabunga.
Iterambere ry'ikoranabuhanga rigezweho ryerekana inzira igaragara yo guhuza: MOSFET ikomeje kwinjira mu murima mwinshi kandi ufite ingufu nyinshi binyuze mu ikoranabuhanga rya SiC / GaN; IGBT ikomeje kwagura umurongo wa radiyo ikora binyuze mu guhanga ibintu; mugihe vacuum tubes ihura nigitutu cyo guhatanira ibikoresho bikomeye-mugihe ikomeza ibyiza bya ultra-high frequency. Ihindagurika ry'ikoranabuhanga ririmo guhindura imiterere y'inganda zo gushyushya amashanyarazi.
Mu gutoranya nyirizina, abajenjeri bakeneye gusuzuma byimazeyo ibintu bitatu byingenzi byinshyi, imbaraga nubukungu: MOSFET ikundwa kumurongo mwinshi kandi ufite ingufu nkeya, IGBT yatoranijwe kumurongo wo hagati hamwe nimbaraga nyinshi, kandi trium vacuum iracyakenewe kuri ultra-high frequency and power power. Hamwe nogutezimbere kwagutse-nini ya tekinoroji ya semiconductor, iki gipimo cyo gutoranya kirashobora guhinduka, ariko mugihe kiri imbere, ubwoko butatu bwibikoresho buzakomeza kugira uruhare runini mubice byabo byinyungu zabo, kandi dufatanyirize hamwe guteza imbere tekinoroji yo gushyushya induction igana ku cyerekezo cyiza kandi cyuzuye.
